fm - 05vc1 bi - directional esd diode mechanical data e}? ? dice size a x :380um,a y :430um,b x :180um,b y :230um wafer size 4 chip thickness 138um12um scribe line width 60um top metal al for wire bonding,d=2.2um0.2um back side metal ti - ni - ag for soldering parameter ^?u}o }v]?}v? so hv]? reverse stand - of voltage v rwm 5.0 v peak pulse power p pp tp=8/20us 130 w peak pulse current i pp tp=8/20us 12.0 a electrostatc discharge v esd iec61000 - 4 - 2 level 4 15(air) kv max.juncton temp. t j + 150 parameter ^?u}o }v]?}v d]vx d??x d?x hv]? breakdown voltage v br i t =1ma 5.6 9.4 v reverse leakage current i r v r =5v 0.09 ua clamping voltage vc i pp =1.0a i pp =12a 10.0 14.0 v diode capacitancd pin1 to 2 cj v r =0v f=1mh z 24.0 30.0 pf characteristcs ta=25 notes: ( 1)sampling testng:no bad dice inking/guaranteed good die >93% (2)testng follow customer (3)tj=ta+rth(j - a)*(pf+pr),where rth(j - a) - thermal resistance,pf - forward power dissipaton, pr - revers power dissipaton (4)**for device testng ew1608f7 - fw - a futurewafer technology co.,ltd www.futurewafer.com.tw+886 - 3 - 3573583
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